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preliminary data sheet june 2004 AGR19045EF 45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor introduction the AGR19045EF is a 45 w, 28 v n-channel later- ally diffused metal oxide semiconductor (ldmos) rf power field effect transistor (fet) suitable for personal communication service (pcs) (1930 mhz? 1990 mhz), global system for mobile communication (gsm/edge), time-division multiple access (tdma), and single-carrier or multicarrier class ab power amplifier applications. figure 1. AGR19045EF (flanged) package typical two carrier n-cdma performance: v dd = 28 v, i dq = 550 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz, is-95 cdma (pilot, sync, paging, traffic codes 8?13). peak/average (p/a) = 9.72 db at 0.01% probability on ccdf. 1.2288 mhz trans- mission bandwidth (bw). adjacent channel power ratio (acpr) measured over 30 khz bw at f1 ? 885 khz and f2 + 885 khz. third-order intermodu- lation distortion (im3) measured over a 1.2288 mhz bw at f1 ? 2.5 mhz and f2 + 2.5 mhz: ? output power (p out ): 9.5 w. ? power gain: 15 db. ? efficiency: 24.8%. ? im3: ?34.5 dbc. ? acpr: ?49.5 dbc. edge features typical edge performance, 1990 mhz, 26 v, i dq = 400 ma: ? output power (p out ): 18 w typical. ? power gain: 14.5 db. ? efficiency: 35% typical. ? spectral regrowth: ? @ 400 khz = ?62 dbc. ? @ 600 khz = ?74 dbc. ? error vector magnitude (evm) = 2.0%. gsm features typical performance over entire gsm band: ? p1db: 50 w typical. ? power gain @ p1db = 14.0 db continuous wave (cw). ? efficiency @ p1db = 54% typical cw. ? return loss: ?10 db. device performance features high-reliability, gold-metalization process. low hot carrier injection (hci) induced bias drift over 20 years. internally matched. high gain, efficiency, and linearity. integrated esd protection. device can withstand 10:1 voltage standing wave ratio (vswr) at 28 vdc, 1930 mhz, 45 w cw out- put power. large signal impedance parameters available. esd rating * * although electrostatic discharge (esd) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to esd and electrical overstress (eos) during all handling, assembly, and test operations. agere employs a human-body model (hbm), a machine model (mm), and a charged-device model (cdm) qualification requirement in order to determine esd-susceptibility limits and protection design evaluation. esd voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by jedec's jesd22-a114b (hbm), jesd22-a115a (mm), and jesd22-c101a (cdm) standards. caution: mos devices are susceptible to damage from elec- trostatic charge. reasonable precautions in han- dling and packaging mos devices should be observed. AGR19045EF minimum (v) class hbm 500 1b mm 50 a cdm 1500 4
2 agere systems inc. 45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19045EF preliminary data sheet electrical characteristics table 1. thermal characteristics table 2. absolute maximum ratings * * stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. t hese are absolute stress ratings only. functional operation of the device is not imp lied at these or any other conditions in excess of those given in the operational sections of the data sheet. exposure to absolute maximum ratings for exte nded periods can adversely affect device reliability. recommended operating conditions apply unless otherwise specified: t c = 30 c. table 3. dc characteristics parameter symbol value unit thermal resistance, junction to case r jc 1.5 c/w parameter symbol value unit drain-source voltage v dss 65 vdc gate-source voltage v gs ?0.5, 15 vdc total dissipation at t c = 25 c p d 115 w derate above 25 c ? 0.67 w/c operating junction temperature t j 200 c storage temperature range t stg ?65, 150 c parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs =0v, i d =38a) v (br)dss 65 ? ? vdc gate-source leakage current (v gs =5v, v ds =0v) i gss ??1.3adc zero gate voltage drain leakage current (v ds =28v, v gs =0v) i dss ??4adc on characteristics forward transconductance (v ds =10v, i d =0.4a) g fs ?3.0? s gate threshold voltage (v ds =10v, i d =130a) v gs(th) ? ? 4.8 vdc gate quiescent voltage (v ds =28v, i d = 400 ma) v gs(q) ?3.7? vdc drain-source on-voltage (v gs =10v, i d =0.4a) v ds(on) ?0.3? vdc
agere systems inc. 3 preliminary data sheet AGR19045EF june 2004 45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor electrical characateristics (continued) recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. rf characteristics parameter symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =28v, v gs =0, f=1.0mhz) (this part is internally matched on both the input and output.) c rss ?1.0?pf functional tests (in agere systems supplied test fixture) common-source amplifier power gain (v dd =28vdc, p out = 9 w average, 2-carrier n-cdma, i dq =550ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) g ps 14.5 15.0 ? db drain efficiency (v dd =28vdc, p out = 9 w average, 2-carrier n-cdma, i dq =550ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) ?24.8? % third-order intermodulation distortion (v dd =28vdc, p out = 9 w average, 2-carrier n-cdma, i dq =550ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz; im3 measured in a 1.228 mhz integration bandwidth centered at f1 ? 2.5 mhz and f2 + 2.5 mhz, referenced to the carrier channel power) im3 ? ?34.5 ? dbc adjacent channel power ratio (v dd =28vdc, p out = 9 w average, 2-carrier n-cdma, i dq =550ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz; acpr measured in a 30 khz integration bandwidth centered at f1 ? 885 khz and f2 + 885 khz, referenced to the carrier channel power) acpr ? ?49.5 ? dbc input return loss (v dd =28vdc, p out = 9 w average, 2-carrier n-cdma, i dq =550ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) irl ? ?10 ? db output power at 1 db gain compression (v dd =28v, p out = 45 w cw, f = 1990 mhz, i dq =400ma) p1db 45 50 ? w ruggedness (v dd =28v, p out =45w cw, i dq = 400 ma, f = 1930 mhz, vswr = 10:1 [all phase angles]) no degradation in output power.
4 agere systems inc. 45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19045EF preliminary data sheet test circuit illustrations for AGR19045EF a. schematic b. component layout parts list: microstrip line: z1, 0.320 in. x 0.067 in.; z2, 0.185 in. x 0.067 in.; z3, 0.345 in. x 0.067 in.; z4, 0.250 in. x 0.160 in.; z5, 0.180 in. x 0.2 60 in.; z6, 0.400 in. x 0.735 in.; z7, 0.355 in. x 0.840 in.; z8, 0.120 in. x 0.280 in.; z9, 0.525 in. x 0.130 in.; z10, 0.145 in. x 0. 067 in.; z11, 0.245 in. x 0.067 in.; z12, 0.290 in. x 0.067 in.; z13, 0.370 in. x 0.030 in.; z14, 0.280 in. x 0.050 in. atc ? b case chip capacitors: c5, c12, c22: 8.2 pf; c6, c20: 10 pf; c13: 1000 pf. atc s case chip capacitor: c21: 0.2 pf kemet ? b case chip capacitors: c2, c16: 0.1 f cdr33bx104 akws. tantalum capacitor: c17, 1 f, 50 v, t491c. vitramon ? 1206: c4, c14: 22000 f. johanson giga-trim ? variable capacitor c7: 0.4 pf?2.5 pf. murata ? 0805: c3, c15: 0.01 f, grm40x7r103k100al. sprague ? tantalum surface-mount chip capacitor: c1, c18, c19, c23: 22 f, 35 v. fair-rite ? ferrite bead: fb1: 2743019447. fixed film chip resistor: r1: 12 , 0.25 w, 0.08 x 0.13. pcb etched circuit boards. taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. figure 2. AGR19045EF test circuit dut r1 c3 z13 c6 z3 z1 c20 z7 z8 z10 z11 rf input v gg v dd rf z6 z4 fb1 z14 c4 c15 3 1 2 pins: 1. drain, 2. gate, 3. source c23 c12 c14 c13 c1 c2 c5 c22 z2 c7 z5 z9 z12 output c19 c16 c18 c17 c21 231
agere systems inc. 5 preliminary data sheet AGR19045EF june 2004 45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor typical performance characteristics note: z l was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion. figure 3. series equivalent input and output impedances mhz (f) z s ? ( complex source impedance ) z l ? (complex optimum load impedance) 1930 (f1) 2.79 ? j8.63 4.94 ? j6.00 1960 (f2) 2.64 ? j8.20 4.82 ? j5.91 1990 (f3) 2.38 ? j7.78 4.47 ? j5.79 0 .1 0 .1 0.1 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0 .7 0.7 0 .8 0.8 0 .9 0.9 1.0 1.0 1 .2 1.2 1.4 1.4 1.6 1.6 1.8 1.8 2.0 2.0 3.0 3.0 4.0 4.0 5.0 5.0 1 0 1 0 10 20 20 20 50 50 50 0.2 0 .2 0 .2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0 .8 0.8 1.0 1.0 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 170 -170 180 90 -90 -8 5 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0 .0 4 0.05 0 .0 6 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0 .1 7 0 .18 0 .1 9 0.2 0 .2 1 0.22 0.23 0.23 0.24 0.24 0.25 0.25 0.26 0.26 0.27 0.27 0 .2 8 0 .2 9 0.3 0 .3 1 0.3 2 0.3 3 0.34 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0 .42 0.4 3 0 .4 4 0.45 0 .4 6 0.47 0.48 0.48 0.49 0.49 0.0 0.0 a n g l e o f t r a n s m i s s i o n c o e f f i c i e n t i n d e g r e e s a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s e > w a v e l e n g t h s t o w a r d < e w a v e l e n g t h s t o w a r d l o a d < e i n d u c t c a p a c i t i v e r e a c t a n c e c o m p o n e n t ( - j x / z o ) , o r i n d u c t i v e s u s c e p t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) f z s f3 f1 z l f1 f3 z 0 = 10 ? dut z s z l input match output match drain (1) source (3) gate (2)
6 agere systems inc. 45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19045EF preliminary data sheet typical performance characteristics (continued) test conditions: v dd = 28 vdc, i dq = 400 ma, cw center frequency = 1960 mhz. figure 4. cw p out vs. p in test conditions: v dd = 28 v , i dq = 550 ma, f1 = 1960 mhz, n-cdma, 2.5 mhz @ 1.2288 mhz bandwidth. peak/average = 9.72 db @ 0.01% probability (ccdf). channel spacing (bandwidth): 885 khz ( 30 khz), 1.25 mhz (12.5 khz), 2.25 mhz (1 mhz). figure 5. n-cdma acpr, power gain, and drain efficiency vs. power 25 30 35 40 45 50 15 20 25 30 35 40 p in (dbm ) z p out (dbm ) z 7 8 9 10 11 12 13 14 15 16 17 g ps (db) z p1db = 47. 37 dbm (54. 59 w ) p3db = 48. 20 dbm (66. 03 w ) p o u t g p s 0 5 10 15 20 25 30 35 40 45 50 25 30 35 40 45 p out (dbm) average z g ps (db), (%) z -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 adjacent channel power (dbc) z g ps 885 khz 2.25 mhz 1.25 mhz
agere systems inc. 7 preliminary data sheet AGR19045EF june 2004 45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor typical performance characteristics (continued) test conditions: v dd = 28 v, i dq = 550 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz. 2 x n-cdma, 2.5 mhz @ 1.2288 mhz bandwidth. peak/average = 9.72 db @ 0.01% probability (ccdf). channel spacing (bandwidth); acpr: 885 khz (30 khz), im3: 2.5 mhz (1.2288 mhz). figure 6. 2-carrier n-cdma acpr, im3, power gain, and drain efficiency vs. power test conditions: v dd = 28 v dc , f1 = 1958.75 mhz, f2 = 1961.25 mhz, 2-carrier n-cdma measurement. figure 7. 2-carrier n-cdma, g ps vs. p out 0 5 10 15 20 25 30 35 40 45 50 55 60 30 35 40 45 p o u t (dbm) z g ps (db), (%) z -70 -60 -50 -40 -30 -20 -10 im3 (dbc), acpr (dbc) z acp g p s im3 13.25 14.25 15.25 30 35 40 45 p out (dbm) z g ps (db) z i dq = 300 ma i dq = 600 ma i dq = 550 ma i dq = 500 ma i dq = 400 ma i dq = 700 ma
8 agere systems inc. 45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19045EF preliminary data sheet typical performance characteristics (continued) test conditions: v dd = 28 v dc , f1 = 1958.75 mhz, f2 = 1961.25 mhz, 2-carrier n-cdma measurement. figure 8. acpr vs. p out test conditions: v dd = 28 v dc , f1 = 1958.75 mhz, f2 = 1961.25 mhz, 2-carrier n-cdma measurement. figure 9. im3 vs. p out -70 -65 -60 -55 -50 -45 -40 -35 30 35 40 4 5 p out (dbm) z acpr (dbc) z i dq = 300 ma i dq = 600 ma i dq = 400 ma i dq = 550 ma i dq = 700 ma i dq = 500 ma -55 -50 -45 -40 -35 -30 -25 -20 30 35 40 45 p ou t (dbm) z im3 (dbc) z i d q = 300 ma i dq = 600 ma i d q = 550 ma i d q = 500 ma i dq = 400 ma i d q = 700 ma
agere systems inc. 9 preliminary data sheet AGR19045EF june 2004 45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor typical performance characteristics (continued) test conditions: v dd = 26 vdc, i dq = 400 ma, f = 1960 mhz, modulation = gsm/edge. figure 10. gsm/edge power gain, drain efficiency, spectral regrowth, and evm average vs. p out test conditions: v dd = 28 vdc, i dq = 400 ma, f = 1960 mhz, modulation = gsm/edge. figure 11. gsm/edge power gain, drain efficiency, spectral regrowth, and evm average vs. p out 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 p out (w) average z g ps (db), (%), evm (%) z -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 spectral regrowth (dbc) z evm g ps 600 khz 400 khz 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 p o u t (w) average z g ps (db), (%), evm (%) z -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 spectral regrow th (dbc) z evm g p s 600 khz 400 khz
10 agere systems inc. 45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19045EF preliminary data sheet package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. AGR19045EF label notes: m before the part number denotes m odel program. x before the part number denotes engineering prototype. the last two letters of the part number denote wafer technology and package type. yywwll is the date code including place of m anufacture: year year work week (yyww), ll = location (al = allentown, pa; t = thai land). xxxxx = five-digit wafer lot number. zzzzzzz = seven-digit assembly lot number on production parts. zzzzzzzzzzzz = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. agere agr21045f yywwll zzzzzzz 1 2 3 1 3 2 pins: 1. drain 2. gate 3. source agere agr19045xf yywwll xxxxx zzzzzzz
45 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19045EF preliminary data sheet atc is a registered trademark of american technical ceramics corp. kemet is a registered trademark of krc trade corporation. vitramon is a registered trademark of vitramon incorporated. sprague is a registered trademark of spr ague electric company corporation. murata is a registered trademark of murata electronics north america, inc. johanson and giga-trim are registered trademarks of johanson manufacturing corporation. fair-rite is a registered trademark of fair-rite products corporation. taconic is a registered trademark of tonoga limited dba taconic plastics ltd. copyright ? 2004 agere systems inc. all rights reserved june 2004 ds04-240rfpp (replaces ds04-077rfpp) agere systems inc. reserves the right to make changes to the pr oduct(s) or information contained herein without notice. no liab ility is assumed as a result of their use or application. agere is a registered trademark of agere systems inc. agere s ystems and the agere logo are trademarks of agere systems inc. for additional information, contact your agere systems account manager or the following: internet: http://www.agere.com e-mail: docmaster@agere.com n. america: agere systems inc., lehigh valley central campus, room 10a-301c, 1110 american parkway ne, allentown, pa 18109-9138 1-800-372-2447 , fax 610-712-4106 (in canada: 1-800-553-2448 , fax 610-712-4106) asia: china: (86) 21-54614688 (shanghai), (86) 755-25881122 (shenzhen) japan: (81) 3-5421-1600 (tokyo), korea: (82) 2-767-1850 (seoul), singapore: (65) 6778-8833 , taiwan: (886) 2-2725-5858 (taipei) europe: tel. (44) 1344 296 400 rf power product information for product and application information, please visit our website: http://www.agere.com/rfpower .

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